Charge transport in heavily B‐doped polycrystalline diamond films
Charge transport in heavily B‐doped polycrystalline diamond films
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DOI：
10.1063/1.111088
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发表时间：
1994-01
影响因子：
4
通讯作者：
M. Werner;O. Dorsch;H. Baerwind;E. Obermeier;L. Haase;W. Seifert;A. Ringhandt;C. Johnston
中科院分区：
文献类型：
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作者：
M. Werner;O. Dorsch;H. Baerwind;E. Obermeier;L. Haase;W. Seifert;A. Ringhandt;C. Johnston
在100 ~ 750 K温度范围内对原位重掺B的多晶金刚石薄膜进行了温度依赖的电导率和霍尔测量。电导率的斜率显然是非阿累尼乌斯型，导致低温下出现明显的尾部。低温下的载流子输运主要由可变距离跳变控制。激活能随掺杂浓度的增加而降低，最重掺杂的金刚石薄膜在室温以上表现出金属行为。测量的空穴载流子浓度高达1.8×1021 cm−3，与二次离子质谱研究一致。
Temperature‐dependent conductivity and Hall measurements have been carried out on heavily in situ B‐doped polycrystalline diamond films in a temperature range from ∼100 to 750 K. The slope of the conductivity is clearly non‐Arrhenius leading to a pronounced tail at low temperatures. Carrier transport at low temperatures is dominated by variable range hopping. The activation energy decreases with increasing doping concentration and the most heavily doped diamond films show metallic behavior above room temperature. Hole carrier concentrations up to 1.8×1021 cm−3 were measured in agreement with secondary‐ion‐mass spectroscopy investigations.