Deposition and characterization of highly p-type antimony doped ZnTe thin films
Deposition and characterization of highly p-type antimony doped ZnTe thin films
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DOI：
10.1016/j.tsf.2008.10.078
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发表时间：
2009-02-02
期刊：
影响因子：
2.1
通讯作者：
Jaegermann, W.
中科院分区：
文献类型：
--
作者：
Barati, A.;Klein, A.;Jaegermann, W.
本文报道了在分子束外延系统的超高真空环境中，用ZnTe和Sb泻流室在玻璃衬底上沉积高p型锑掺杂ZnTe薄膜。人们发现，广泛使用的传统的共蒸发技术不产生高度的p型薄膜。通过一系列的沉积实验，一个4步的方法，包括层的沉积，然后由后退火过程被开发出来。最大载流子浓度为3 × 10 ~（19）cm ~（-3），这是ZnTe：Sb薄膜的最高记录。利用AFM和XRD对薄膜的表面形貌和结构进行了分析。采用四探针和室温霍尔效应测量方法研究了Sb掺杂薄膜的电学性质。(C)2008 Elsevier B. V.保留所有权利。
We report deposition of highly p-type antimony doped ZnTe films onto glass substrates using ZnTe and Sb effusion cells in ultra-high-vacuum environment of an MBE system. It was found that the widely-used conventional co-evaporation technique does not produce highly p-type films. Through a series of deposition experiments, a 4-step method consisting deposition of the layers followed by a post annealing process was developed. The maximum carrier concentration was 3 x 10(19) cm(-3) which is the highest reported for ZnTe:Sb films. The surface morphology and the structure of the films were analyzed using AFM and XRD. Electrical properties of Sb doped films were investigated by four-point probe and room temperature Hall effect measurements. (C) 2008 Elsevier B.V. All rights reserved.