Van der Waals Heterostructure Photodetectors with Bias-Selectable Infrared Photoresponses

Van der Waals Heterostructure Photodetectors with Bias-Selectable Infrared Photoresponses
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DOI:
10.1021/acsami.2c06088
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发表时间:
2022-07-07
影响因子:
9.5
通讯作者:
Liu, Chang-Hua
Liu, Chang-Hua
中科院分区:
材料科学2区
文献类型:
--
作者:
Chang, Tian-Yun;Chen, Po-Liang;Liu, Chang-Hua

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偏压可选择的光电探测器,其可以通过调节所施加的偏压的极性来感测感兴趣的波长,对于目标辨别和识别应用是有用的。到目前为止,这些探测器通常基于背靠背光电二极管配置,通过利用外延半导体作为光电材料,这不可避免地导致高制造成本和复杂的器件架构。在这里,我们证明了我们的能带工程货车德瓦耳斯异质结构可以应用于偏置可选择的光电探测器。我们的第一个原型器件主要由黑磷(BP)和MoTe 2光吸收剂组成,并覆盖一层薄的MoS 2空穴阻挡层。通过改变偏置极性,该探测器的光谱响应可以在近红外和短波红外波段之间切换,光电性能测试表明,该探测器具有较高的外量子效率和较快的工作速度。在此框架下,我们进一步展示了使用BP/MoS 2/砷掺杂BP异质结构在中波红外波段内具有偏压可选光响应的探测器,并表明我们开发的探测器可以集成到单像素成像系统中以捕获双波段红外成像。
A bias-selectable photodetector, which can sense the wavelength of interest by tuning the polarity of applied bias, is useful for target discrimination and identification applications. So far, those detectors are generally based on the back-to-back photodiode configuration via exploiting epitaxial semiconductors as optoelectronic materials, which inevitably lead to high fabrication costs and complex device architectures. Here, we demonstrate that our band-engineered van der Waals hetero-structures can be applied as bias-selectable photodetectors. Our first prototypical device is mainly composed of black phosphorus (BP) and MoTe2 light absorbers sandwiching a thin MoS2 hole blocking layer. By varying the bias polarity, its spectral photoresponse can be switched between near-infrared and short-wave infrared bands, and our optoelectronic characterizations indicate that the detector can exhibit high external quantum efficiency (EQE) and fast operation speed. With this framework, we further demonstrate the detector with bias-selectable photoresponses within the mid-wave infrared band using BP/MoS2/arsenic-doped BP heterostructures and show that our developed detectors can be integrated into a single-pixel imaging system to capture dual-band infrared imaging.