Enhancement of the partial discharge inception voltage of ceramic substrates for power modules by trench coating
Enhancement of the partial discharge inception voltage of ceramic substrates for power modules by trench coating
复制标题
通过沟槽涂层提高功率模块陶瓷基板的局部放电起始电压
DOI:
10.1109/icep.2016.7486885
复制
发表时间:
2016
期刊:
影响因子:
--
通讯作者:
A. Schletz
中科院分区:
文献类型:
--
作者:
U. Waltrich;C. F. Bayer;M. Reger;A. Meyer;X. Tang;A. Schletz
Due to the ongoing development of high-blocking semiconductors the installed ceramic circuit boards in power modules, such as DBC (Direct Bond Copper) or AMB (Active Metal Brazed) substrates, will have to isolate high voltages (HV) beyond 6.5 kV in the near future with high lifetime and reliability. Such high blocking voltages and the correlating increased electrical field strengths induce partial discharges (PD) in the ceramic substrate as well in the encapsulating organic materials, which represent a key degradation mechanism of HV power modules. In this work a promising novel coating technology for ceramic substrate trenches, significantly enhancing the partial inception voltage (PDIV) of these substrates, is presented. The coating works as a refractive field control and reduces the field strengths in the most critical section for PD - the so-called triple point - between ceramic, encapsulate and copper metallization. Electric field simulations show a possible reduction of the electric loads in that critical area by over 10 %. Phase resolved partial discharge (PRPD) tests confirm the simulation results by significantly increased partial discharge inception voltages (PDIV) of trench coated Al2O3 DBC substrates (curamik® power) compared to untreated ones. Long term aging tests (1000 h @ 85 °C/85 % r. h.) on trench coated DBCs, covered with Wacker SilGel 612®, were executed to examine the robustness of this coating and to investigate the PD behavior of DBC substrates depending on the degree of aging. The novel coating looks very promising.
DOI:
10.1109/tdei.2010.5539704
发表时间:
2010-08
影响因子:
3.1
作者:
Ningyan Wang;I. Cotton;J. Robertson;S. Follmann;K. Evans;D. Newcombe
通讯作者:
Ningyan Wang;I. Cotton;J. Robertson;S. Follmann;K. Evans;D. Newcombe