High Current Density Esaki Tunnel Diodes Based on GaSb-InAsSb Heterostructure Nanowires
High Current Density Esaki Tunnel Diodes Based on GaSb-InAsSb Heterostructure Nanowires
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DOI：
10.1021/nl202180b
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发表时间：
2011-10-01
期刊：
影响因子：
10.8
通讯作者：
Thelander, Claes
中科院分区：
文献类型：
--
作者：
Ganjipour, Bahram;Dey, Anil W.;Thelander, Claes
我们提出了断隙GaSb-InAsSb纳米线异质结的电学特性。在室温下，Esaki二极管在0.50 V时的最大反向电流为1750 kA/cm(2)，在0.11 V时的最大峰值电流为67 kA/cm(2)，峰谷比（PVR）为2.1。反向电流密度可与基于高掺杂p-n结的最先进隧道二极管相媲美。然而，在这项工作中研究的GaSb-InAsSb二极管不依赖于重掺杂，这允许研究用高卡帕栅极介质和顶栅极处理的简单晶体管结构中的输运机制。这种处理导致器件具有改进的PVR（3.5）和电性能的稳定性。
We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki diode characteristics with maximum reverse current of 1750 kA/cm(2) at 0.50 V, maximum peak current of 67 kA/cm(2) at 0.11 V, and peak-to-valley ratio (PVR) of 2.1 are obtained at room temperature. The reverse current density is comparable to that of state-of-the-art tunnel diodes based on heavily doped p-n junctions. However, the GaSb-InAsSb diodes investigated in this work do not rely on heavy doping, which permits studies of transport mechanisms in simple transistor structures processed with high-kappa gate dielectrics and top-gates. Such processing results in devices with improved PVR (3.5) and stability of the electrical properties.