VECSEL threshold and output power-shutoff dependence on the carrier recombination rates

VECSEL threshold and output power-shutoff dependence on the carrier recombination rates
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VECSEL 阈值和输出功率关断取决于载流子复合率

DOI:
10.1109/lpt.2005.858087
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发表时间:
2005
影响因子:
2.6
通讯作者:
S. Koch
S. Koch
中科院分区:
工程技术3区
文献类型:
--
作者:
A. Zakharian;J. Hader;J. Moloney;S. Koch

文献摘要

被引文献

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计算了光泵垂直外腔面发射激光器的阈值和热驱动功率关断特性。使用定量的数值模型,阈值和关断功率水平的变化进行了对比的两种方法来计算的载流子复合率:使用AN+BN/sup 2/+CN/sup 3/模型与温度和载流子密度的独立系数,与使用的复合率预先计算的微观多体理论的框架内。
We compute the lasing threshold and thermally driven power-shutoff characteristics of optically pumped vertical-external-cavity surface-emitting lasers. Using a quantitative numerical model, variations in the threshold and shutoff power levels are contrasted for the two approaches to the computation of the carrier recombination rates: using the AN+BN/sup 2/+CN/sup 3/ model with the temperature and carrier density independent coefficients, versus using recombination rates precomputed within the framework of the microscopic many-body theory.