Monolayer graphene growth on Ni(111) by low temperature chemical vapor deposition
Monolayer graphene growth on Ni(111) by low temperature chemical vapor deposition
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DOI：
10.1063/1.3675481
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发表时间：
2012-01-09
影响因子：
4
通讯作者：
Batzill, Matthias
中科院分区：
文献类型：
--
作者：
Addou, Rafik;Dahal, Arjun;Batzill, Matthias
与通常采用的高温化学气相沉积生长（其通过碳从块体中分离而导致多层石墨烯形成）相反，我们证明了低于600摄氏度的石墨烯可以在自限性单层生长过程中生长。最佳生长在类似于550摄氏度的温度下实现。高于该温度，碳扩散到本体中限制了表面生长速率，而在低于类似于500摄氏度的温度下，竞争性表面碳化物相阻碍石墨烯形成。(C)2012年美国物理学会。[doi：10.1063/1.3675481]
In contrast to the commonly employed high temperature chemical vapor deposition growth that leads to multilayer graphene formation by carbon segregation from the bulk, we demonstrate that below 600 degrees C graphene can be grown in a self-limiting monolayer growth process. Optimum growth is achieved at similar to 550 degrees C. Above this temperature, carbon diffusion into the bulk is limiting the surface growth rate, while at temperatures below similar to 500 degrees C a competing surface carbide phase impedes graphene formation. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675481]