Super-resolution optical inspection for semiconductor defects using standing wave shift
Super-resolution optical inspection for semiconductor defects using standing wave shift
复制标题
使用驻波位移对半导体缺陷进行超分辨率光学检查
DOI：
10.1117/12.648356
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
K. Takamasu
中科院分区：
文献类型：
--
作者：
S. Usuki;H. Nishioka;S. Takahashi;K. Takamasu
半导体设计规则和工艺窗口不断缩小，因此我们在开发300 mm晶圆、铜线和低k值晶圆等新工艺方面面临许多挑战。挑战变得更加困难，因为我们必须解决图案化和未图案化晶片上的问题。这些问题包括物理缺陷，电气缺陷，甚至宏观缺陷，这些缺陷可能会破坏整个晶圆而不仅仅是芯片。光学和电子束主要用于检测关键缺陷，但这两种技术都有缺点。光学检测通常对100 nm及以下几何形状的缺陷不够敏感，而SEM检测的吞吐量较低，因为它需要长时间准备真空和扫描300 mm。为了解决这些问题，我们提出了一种新的基于驻波位移的临界缺陷光学检测方法。该方法是基于超分辨率算法，其中的检测系统的分辨率超过衍射极限，通过移动驻波与压电致动器。此外，这种方法是光学的，所以我们可以期待开发高吞吐量的检测系统。在这份报告中，我们进行了理论讨论和计算机模拟的缺陷检测上的图案化的晶圆。因此，我们成功地检测到关键缺陷的亚90纳米线和空间互连。
Semiconductor design rules and process windows continue to shrink, so we face many challenges in developing new processes such as 300mm wafer, copper line and low-k dielectrics. The challenges have become more difficult because we must solve problems on patterned and un-patterned wafers. The problems include physical defects, electrical defects, and even macro defects, which can ruin an entire wafer rather than just a die. The optics and electron beam have been mainly used for detecting of the critical defects, but both technologies have disadvantages. The optical inspection is generally not enough sensitive for defects at 100nm geometries and below, while the SEM inspection has low throughput because it takes long time in preparing a vacuum and scanning 300mm. In order to find a solution to these problems, we propose the novel optical inspecting method for the critical defects using standing wave shift. This method is based on a super-resolution algorism in which the inspection system's resolution exceeds the diffraction limit by shifting standing wave with the piezoelectric actuator. Additionally this method is optical one, so we can expect to develop high throughput inspection system. In this report, we performed theoretical discussions and computer simulations the defect detection on a patterned wafer. As a result, we succeeded in detecting the critical defects in the sub-90nm line and space interconnections.