180 to 240 GHz broadband, EM-based power amplifier using 0.5-μm InP DHBT technology
180 to 240 GHz broadband, EM-based power amplifier using 0.5-μm InP DHBT technology
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采用 0.5-μm InP DHBT 技术的 180 至 240 GHz 宽带、基于 EM 的功率放大器
DOI：
10.1002/jnm.2591
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发表时间：
2020
影响因子：
1.6
通讯作者：
Haiyan Lu
中科院分区：
文献类型：
--
作者：
Yukun Li;Yong Zhang;Xiao Li;Yapei Chen;Wei Cheng;Yan Sun;Haiyan Lu
报道了一种从180 GHz到240 GHz的太赫兹功率放大器(PA)单片集成电路(TMIC)。该放大器采用0.5-μ磷化铟双异质结双极晶体管(InP DHBT)工艺，采用薄膜微带布线环境。在此基础上，提出了一种用于InP DHBT参数提取和放大器设计的电磁(EM)仿真方法。这种五级放大器具有>；6.1 dBS21从180 GHz到240 GHz的增益，峰值10.4 dBS21在210 GHz的增益。在213 GHz工作时，饱和输出功率为5.8dBm，大信号增益为7.3dBm，面积为2.52mm2(含衬垫)。
This paper reports a power amplifier (PA) terahertz monolithic integrated circuit (TMIC) from 180 to 240 GHz. This amplifier is fabricated from a 0.5‐μm indium phosphide double heterojunction bipolar transistor (InP DHBT) technology, jointly with a thin‐film microstrip wiring environment. Furthermore, an electromagnetic (EM) simulation method is proposed for the parameter extraction of InP DHBTs and amplifier design. This five‐stage amplifier has >6.1 dBS21gain from 180 to 240 GHz, peaks 10.4 dBS21gain at 210 GHz. At 213 GHz operation, the saturated output power is 5.8 dBm with 7.3 dB large‐signal gain, and this amplifier occupies 2.52 mm2including pads.