On the limits of noise performance of field effect transistors
On the limits of noise performance of field effect transistors
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论场效应晶体管噪声性能的极限
DOI：
10.1109/mwsym.2017.8059045
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
M. Pospieszalski
中科院分区：
文献类型：
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作者：
M. Pospieszalski
低于100 nm的FET的栅极长度Lg的减小以及μ gm、截止频率ft和最大振荡频率fmax的相应改进没有导致所测量的最小噪声温度Tmin（或噪声系数Fmin）的预期改进。这一观察适用于当前用途：FET、HEMT和MOSFET的所有FET技术。通过将漏极噪声视为抑制的散粒噪声，电流谱密度由F2qIdΔf给出，其中F是抑制因子，可以解释这一观察结果。对GaAs FET、HEMT、InP HEMT和MOSFET的现有实验数据的重新分析表明，对于长栅极，抑制因子F可以小到0.1，但是对于短于100 nm的栅极长度，抑制因子F迅速增加。这与预期一致，即对于Lg→0，漏极噪声应接近纯散粒噪声且F→1。
A reduction in gate length Lg of FETs below 100 nm and corresponding improvements in transconductance gm, cutoff frequency ft and maximum frequency of oscillation fmax has not resulted in expected improvements in measured minimum noise temperatures Tmin (or noise figures Fmin). This observation applies to all FET technologies currently in use: FETs, HEMTs and MOSFETs. An explanation of this observation is offered by treating drain noise as a suppressed shot noise with current spectral density given by F2qIdΔf, where F is a suppression factor. The re-analysis of the available experimental data for GaAs FETs, HEMTs, InP HEMTS and MOSFETs demonstrates that the suppression factor F can be as small as 0.1 for long gates but increases rapidly for gate lengths shorter than 100 nm. It is consistent with the expectation that for Lg→0 the drain noise should approach pure shot noise and F→1.