Dilute electron gas near the metal-insulator transition: Role of valleys in silicon inversion layers
Dilute electron gas near the metal-insulator transition: Role of valleys in silicon inversion layers
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DOI：
10.1103/physrevlett.88.016802
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发表时间：
2002-01-07
影响因子：
8.6
通讯作者：
Finkel'stein, AM
中科院分区：
文献类型：
--
作者：
Punnoose, A;Finkel'stein, AM
我们强调的作用，山谷中的稀电子气的输运性质的Si MOSFET。接近金属-绝缘体转变的临界区域，电阻率下降高达5倍，已被捕获在正确的温度间隔的相互作用和无序的相互作用的重整化群分析。如果假设电子带有两个不同的谷，则在分析中不涉及可调参数。从不同质量的Si-MOSFET样品获得的数据中的相当大的差异归因于跨两个谷的样品相关的散射率，而当谷间散射可以忽略不计时，普遍的行为预计将保持不变。
We emphasize the role of valleys in the transport properties of the dilute electron gas in Si-MOSFETs. Close to the critical region of the metal-insulator transition the decrease in the resistivity up to 5 times has been captured in the correct temperature interval by a renormalization group analysis of the interplay of interaction and disorder. No adjustable parameters are involved in the analysis if the electron band is assumed to have two distinct valleys. The considerable variance in the data obtained from Si-MOSFET samples of different quality is attributed to the sample-dependent scattering rate across the two valleys, while universal behavior is expected to hold when the intervalley scattering is negligible.