Broadband near-IR double quantum-well heterostructure superluminescent diodes
Broadband near-IR double quantum-well heterostructure superluminescent diodes
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DOI：
10.1070/qe2008v038n08abeh013772
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发表时间：
2008-08-01
影响因子：
0.9
通讯作者：
Yakubovich, S. D.
中科院分区：
文献类型：
--
作者：
Andreeva, E. V.;Volkov, N. A.;Yakubovich, S. D.
实验研究了800~900 nm范围内发射的双量子阱As/GaAs异质结超辐射二极管。与基于类似单量子阱异质结的半导体激光器相比，这些半导体激光器在55 nm以上的发射带宽内提供了足够高的输出功率，而有效沟道长度要短得多。尽管注入电流密度很高，但SLD的使用寿命超过10000小时。
Superluminescent diodes (SLDs) based on double quantum-well (AlGa)As/GaAs heterostructures emitting between 800 and 900 run are studied experimentally. These SLDs provide a high enough output power in the emission bandwidth more than 55 nm at much shorter active channel lengths than SLDs based on similar single quantum-well heterostructures. Despite the high injection current density, the service life of the SLDs exceeds 10000 hours.