QUANTUM HALL EFFECT IN A MULTI-VALLEY TWO-DIMENSIONAL ELECTRON SYSTEM
QUANTUM HALL EFFECT IN A MULTI-VALLEY TWO-DIMENSIONAL ELECTRON SYSTEM
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多谷二维电子系统中的量子霍尔效应
DOI：
10.1142/s0217979207042884
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发表时间：
2007
影响因子：
1.7
通讯作者：
K. Vakili
中科院分区：
文献类型：
--
作者：
M. Shayegan;E. D. Poortere;O. Gunawan;Y. Shkolnikov;E. Tutuc;K. Vakili
AlAs 量子阱中的二维电子在布里渊区的 X 点处占据多个导带最小值。与标准 GaAs 电子相比，这些谷具有较大的有效质量和 g 因子，并且具有高度各向异性。通过适当选择阱宽度并在平面上施加对称破缺应变，可以控制不同谷的占据，从而呈现出具有可调节的有效质量、g因子、费米轮廓各向异性和谷简并性的系统。在这里，我们回顾一下该系统允许我们探索的一些丰富的物理知识。
Two-dimensional electrons in an AlAs quantum well occupy multiple conduction-band minima at the X-points of the Brillouin zone. These valleys have large effective mass and g-factor compared to the standard GaAs electrons, and are highly anisotropic. With proper choice of well width and by applying symmetry-breaking strain in the plane, one can control the occupation of different valleys thus rendering a system with tuneable effective mass, g-factor, Fermi contour anisotropy, and valley degeneracy. Here we review some of the rich physics that this system has allowed us to explore.