Bistability Characteristics of GaN/AlN Resonant Tunneling Diodes Caused by Intersubband Transition and Electron Accumulation in Quantum Well
Bistability Characteristics of GaN/AlN Resonant Tunneling Diodes Caused by Intersubband Transition and Electron Accumulation in Quantum Well
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DOI：
10.1109/ted.2014.2310473
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发表时间：
2014-04
影响因子：
3.1
通讯作者：
M. Nagase;T. Tokizaki
中科院分区：
文献类型：
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作者：
M. Nagase;T. Tokizaki
研究了在蓝宝石衬底上生长的GaN/AlN共振隧道二极管的双稳性。通过改变偏置电压的极性，rtd具有高电阻率和低电阻率切换的双稳定特性。负差分电阻是在应用负偏置获得低电阻率后在电流-电压（I-V）特性中实现的。基于自洽方法计算的I-V特性表明，双稳特性是由子带间跃迁引起的量子阱中电子的积累引起的。讨论了氮化镓/氮化镓rtd在超快非易失性存储器中的应用。
The bistability characteristics of GaN/AlN resonant tunneling diodes (RTDs) grown on a sapphire substrate were investigated. The RTDs exhibit bistability characteristics with high and low resistivity switched by varying the polarity of the bias voltage. Negative differential resistance is realized in the current-voltage (I-V) characteristics after low resistivity is achieved by application of a negative bias. The calculated I-V characteristics based on self-consistent methods indicate that the bistability characteristics are caused by the accumulation of electrons in the quantum well due to intersubband transitions. Also, the bistability characteristics of GaN/AlN RTDs were discussed toward the application to the ultrafast nonvolatile memory.