Hot spot susceptibility and testing of PV modules
Hot spot susceptibility and testing of PV modules
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光伏组件的热点敏感性和测试
DOI：
10.1109/pvsc.1991.169273
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发表时间：
1991
期刊：
影响因子：
--
通讯作者：
K. Emery
中科院分区：
文献类型：
--
作者：
E. Molenbroek;D. Waddington;K. Emery
为了探索商用非晶硅和晶体组件局部加热的敏感性，进行了几个介入式和非介入式实验。在侵入性实验中，对几个商用非晶硅模块中的每个单元分别和分组进行了局部加热效果评估。非晶硅组件的损坏发生在反向偏置条件下，在单元之间互连的5-20 mAcm/sup-2/单元电流密度以上的黑暗中。阴影会导致比电流不匹配更大的温升。对于所研究的单片非晶硅模块，每个单元之间的电流失配很严重，但由于分流电阻很低，温升可以忽略不计。
To probe the sensitivity for localized heating of commercial amorphous silicon and crystalline modules, several intrusive and nonintrusive experiments were performed. In the intrusive experiments, each cell in several commercial amorphous silicon modules was evaluated separately and in groups for localized heating effects. Damage in amorphous silicon modules occurred under reverse-bias conditions in the dark above a 5-20 mAcm/sup -2/ cell current density at the interconnection between cells. Shading can cause a larger temperature rise than current mismatch. For the monolithic amorphous silicon modules investigated, the current mismatch between each cell was substantial, but the temperature rise was negligible because of the rather low shunt resistance.<<ETX>>