(Invited) Growth and Characterization of α -, β -, and ε -Ga 2 O 3 Epitaxial Layers on Sapphire
(Invited) Growth and Characterization of α -, β -, and ε -Ga 2 O 3 Epitaxial Layers on Sapphire
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（特邀）蓝宝石上α -、β - 和δ -Ga 2 O 3 外延层的生长和表征
DOI：
10.1149/08007.0191ecst
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
Porter, Lisa M.
中科院分区：
文献类型：
--
作者：
Yao, Yao;Lyle, Luke A.;Rokholt, Johanne A.;Okur, Serdal;Tompa, Gary S.;Salagaj, Tom;Sbrockey, Nick;Davis, Robert F.;Porter, Lisa M.
本研究报告了在 650°C 下在 (001) 蓝宝石衬底上生长的 Ga2O3 外延层的三个不同相（α、β 和 ε）的生长和表征。使用三甲基镓和氧气作为源气体的金属有机化学气相沉积法生长的薄膜观察到稳定的 β 相。相反，对于使用氯化镓和氧气作为源气体通过卤化物气相外延生长的薄膜观察到α-和/或ε-相。报告了 X 射线衍射测量的取向关系，以及界面微观结构的透射电子显微镜图像和不同相的光学透射率测量。
This study reports on the growth and characterization of three different phases–α, β, and ε–of Ga2O3 epitaxial layers grown on (001) sapphire substrates at 650 C. The stable β-phase was observed for films grown using metalorganic chemical vapor deposition with trimethygallium and oxygen as source gases. In contrast, the α-and/or ε-phase (s) were observed for films grown by halide vapor phase epitaxy with gallium chloride and oxygen as source gases. Orientation relationships from x-ray diffraction measurements are reported, along with transmission electron microscopy images of the interfacial microstructure and optical transmittance measurements of the different phases.