Impact of oxygen concentration at the HfOx/Ti interface on the behavior of HfOx filamentary memristors
Impact of oxygen concentration at the HfOx/Ti interface on the behavior of HfOx filamentary memristors
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DOI：
10.1007/s10853-022-07067-1
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发表时间：
2022-05-18
影响因子：
4.5
通讯作者：
Graham, Samuel
中科院分区：
文献类型：
--
作者：
Hah, Jinho;West, Matthew P.;Graham, Samuel
在未来的计算和非易失性存储器中，忆阻器因其在存储计算和神经形态计算中的应用而受到广泛关注。基于氧化物的忆阻器中的电阻切换动力学关键地依赖于氧离子及其与氧空位的复合，以部分地破裂并形成用于在低电阻状态和高电阻状态之间调制器件的导电细丝（CF）。在这项研究中，我们研究了HfOx/Ti界面处的氧离子浓度对HfOx基忆阻器行为的影响。在HfOx表面具有较高氧离子浓度的器件通过在不同时间用氧等离子体处理经由原子层沉积生长的类似于5 nm HfOx活性层来制造。详细的X射线光电子能谱和深度分布分析验证了过量的氧离子存在于HfOx表面，并形成一个薄的TiOx层之间的HfOx和Ti层，导致在HfOx/TiOx/Ti界面结构。这项工作证明了在HfOx/Ti界面区域的界面化学的重要性和它的氧离子运动的CF的控制生长在忆阻器组操作，这是有利于模拟逻辑计算。[图形]。
Moving toward the future computing and non-volatile memory, memristors have gained wide attention for their in-memory computing and neuromorphic computing applications. The resistive switching dynamics in oxide-based memristors rely critically on oxygen ions and their recombination with oxygen vacancies to partially rupture and form the conductive filament (CF) for modulating the device between the low resistance state and high resistance state. In this study, we investigated the effect of oxygen ion concentration at the HfOx/Ti interface on the behavior of HfOx-based filamentary memristors. Devices with higher oxygen ion concentrations at the HfOx surface were fabricated by treating with oxygen plasma at various times on the as grown similar to 5 nm HfOx active layer via atomic layer deposition. Detailed X-ray photoelectron spectroscopy and depth profile analyses verify the excess oxygen ion presence at the HfOx surface, and the formation of a thin TiOx layer between the HfOx and Ti layers, resulting in a HfOx/TiOx/Ti interface structure. This work demonstrates the importance of interface chemistry at the HfOx/Ti interface region and its oxygen ion motion for controlled growth of the CF during memristor set operation, which is favorable for analog logic computation.[GRAPHICS].