Anelastic Behavior in GaAs Semiconductor Nanowires
Anelastic Behavior in GaAs Semiconductor Nanowires
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DOI：
10.1021/nl401175t
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发表时间：
2013-07-01
期刊：
影响因子：
10.8
通讯作者：
Jagadish, Chennupati
中科院分区：
文献类型：
--
作者：
Chen, Bin;Gao, Qiang;Jagadish, Chennupati
利用原位形变透射电子显微镜研究了GaAs（111）（B）表面垂直取向单晶GaAs纳米线的力学行为。在小直径的纳米线中观察到滞弹性，并且滞弹性行为受到纳米线中的晶体缺陷的影响。所观察到的滞弹性的基本机制进行了讨论。这一发现为纳米材料在纳米阻尼领域的应用开辟了前景。
The mechanical behavior of vertically aligned single-crystal GaAs nanowires grown on GaAs(111)(B) surface was investigated using in situ deformation transmission electron microscopy. Anelasticity was observed in nanowires with small diameters and the anelastic behavior was affected by the crystalline defects in the nanowires. The underlying mechanism for the observed anelasticity is discussed. The finding opens up the prospect of using nanowire materials for nanoscale damping applications.