Dense self-assembly on sparse chemical patterns: Rectifying and multiplying lithographic patterns using block copolymers
Dense self-assembly on sparse chemical patterns: Rectifying and multiplying lithographic patterns using block copolymers
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DOI：
10.1002/adma.200800826
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发表时间：
2008-08-18
影响因子：
29.4
通讯作者：
Hinsberg, William D.
中科院分区：
文献类型：
--
作者：
Cheng, Joy Y.;Rettner, Charles T.;Hinsberg, William D.
这里演示了一种光刻友好的自组装工艺，可以倍增并校正现有的抗蚀剂图案。聚合物薄膜（右图）以 14 nm 半节距以两倍周期（左图）组装在薄抗蚀剂图案上。这种定向自组装工艺极大地修复了缺陷并减少了不明确的抗蚀剂图案的特征尺寸变化。
A lithography-friendly self-assembly process which multiplies and rectifies an existing resist patterns is demonstrated here. A polymer film (right figure) has assembled at a 14 nm half-pitch on a thin resist pattern at twice the period (left figure). This directed self-assembly process dramatically heals defects and reduces feature size variation of the ill-defined resist patterns.