InAsP/AlGaInP/GaAs QD laser operating at ~770 nm
InAsP/AlGaInP/GaAs QD laser operating at ~770 nm
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InAsP/AlGaInP/GaAs QD 激光器工作波长约为 770 nm
DOI：
10.1088/1742-6596/740/1/012008
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
Krysa A
中科院分区：
文献类型：
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作者：
Krysa A
本文报道了在AlGaInP/GaAs中用金属有机物气相外延生长三元InAsP量子点的研究。的InAsP量子点激光器结构的性能进行了比较与参考样品含有二元InP量子点。基于X射线衍射，砷在InAsP量子点中的摩尔分数估计为约25%。室温液体接触电致发光测量显示，与InP量子点发射在716 nm处相比，InAsP量子点发射的长波长移动到约775 nm，并且自发发射的半峰全宽增加（71 meV vs 50 meV）。解理时，4 mm长和50 μ m宽的InAsP QD激光器在室温下以脉冲方式在λ 770 nm处工作，阈值电流密度为155 A/cm 2，最大输出光功率为至少200 mW。最高工作温度至少为380 K。
We present a study of metalorganic vapour phase epitaxy of ternary InAsP quantum dots in AlGaInP/GaAs for application in laser diodes. The properties of InAsP QD laser structures were compared with reference samples containing binary InP QDs. Based on X-ray diffraction, the molar fraction of arsenic in InAsP QDs was estimated to be∼ 25%. Room temperature liquid contact electro-luminescence measurements revealed a long wavelength shift of the InAsP QD emission to∼ 775 nm as compared with the InP QD emission at 716 nm and an increased full width at half maximum of the spontaneous emission (71 meV vs 50 meV). As cleaved, 4 mm long and 50 pm wide InAsP QD lasers operated in a pulsed regime at room temperature at∼ 770 nm with a threshold current density of 155 A/cm 2 and a maximum output optical power of at least 200 mW. The maximum operation temperature was at least 380 K.