Heteroepitaxial growth of GaP/ZnS nanocable with superior optoelectronic response.
Heteroepitaxial growth of GaP/ZnS nanocable with superior optoelectronic response.
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DOI：
10.1021/nl3046552
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发表时间：
2013-04
期刊：
影响因子：
10.8
通讯作者：
Linfeng Hu;Megan M. Brewster;Xiaojie Xu;Chengchun Tang;S. Gradečak;X. Fang
中科院分区：
文献类型：
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作者：
Linfeng Hu;Megan M. Brewster;Xiaojie Xu;Chengchun Tang;S. Gradečak;X. Fang
我们展示了一个简单的化学气相沉积方法的控制生长的同轴纳米电缆组成的GaP/ZnS核壳结构。结构分析表明，立方GaP（111）面和纤锌矿ZnS（0001）面具有相似的六方原子结构，面内晶格失配较小，ZnS壳层外延生长在立方GaP核的（100）面上。与单一ZnS纳米带相比，差距/ZnS同轴纳米电缆具有更好的光电性能，如高的光电流和优异的光电流稳定性。这种方法为提高ZnS基光电探测器的性能开辟了新的策略。
We demonstrate the controlled growth of coaxial nanocables composed of GaP/ZnS core-shell structures by a facile chemical vapor deposition method. Structural analysis confirms that the cubic GaP (111) plane and wurtzite ZnS (0001) plane present close similarities in terms of hexagonal-arranged atomic configuration with small in-plane lattice mismatch, and the ZnS shell is epitaxially grown on the (100) plane of the cubic GaP core. Compared with the unitary ZnS nanobelts, the GaP/ZnS coaxial nanocables exhibit improved optoelectronic properties such as high photocurrent and excellent photocurrent stability. This approach opens up new strategy to boost the performance of ZnS-based photodetectors.