Highly polarized photoluminescence and photodetection from single indium phosphide nanowires
Highly polarized photoluminescence and photodetection from single indium phosphide nanowires
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DOI：
10.1126/science.1062340
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发表时间：
2001-08-24
期刊：
影响因子：
56.9
通讯作者：
Lieber, CM
中科院分区：
文献类型：
--
作者：
Wang, JF;Gudiksen, MS;Lieber, CM
我们已经表征了单个，分离的磷化铟（InP）纳米线的基本光致发光（PL）特性，以定义其光电子学的潜力。偏振敏感测量揭示了在平行和垂直于纳米线长轴记录的PL强度的显著各向异性。数量级的极化各向异性被定量地解释为这些独立纳米线与周围环境之间的大介电对比度，而不是量子限制效应。这种本征各向异性被用来制造偏振敏感的纳米级光电探测器，这种探测器可能在集成光子电路、光开关和互连、近场成像和高分辨率探测器中被证明是有用的。
We have characterized the fundamental photoluminescence (PL) properties of individual, isolated indium phosphide (InP) nanowires to define their potential for optoelectronics. Polarization-sensitive measurements reveal a striking anisotropy in the PL intensity recorded parallel and perpendicular to the long axis of a nanowire. The order-of-magnitude polarization anisotropy was quantitatively explained in terms of the large dielectric contrast between these freestanding nanowires and surrounding environment, as opposed to quantum confinement effects. This intrinsic anisotropy was used to create polarization-sensitive nanoscale photodetectors that may prove useful in integrated photonic circuits, optical switches and interconnects, near-field imaging, and high-resolution detectors.