Control Over Dimer Orientations on Vicinal Si(100) Surfaces in Hydrogen Ambient: Kinetics Versus Energetics
Control Over Dimer Orientations on Vicinal Si(100) Surfaces in Hydrogen Ambient: Kinetics Versus Energetics
复制标题
氢气环境中邻位 Si(100) 表面二聚体取向的控制：动力学与能量学
DOI：
10.1002/pssb.201700493
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
T. Hannappel
中科院分区：
文献类型：
--
作者：
S. Brückner;O. Supplie;A. Dobrich;P. Kleinschmidt;T. Hannappel
在化学气相气氛中，Si（100）表面和氢在相应的工艺温度下彼此强烈相互作用。能量考虑不能单独充分描述台阶和阶地的形成，因为平衡表面重建的形成可以被表面动力学抵消。近年来，原位反射各向异性光谱（RAS）和互补的基于超高真空的表面敏感技术的结合有助于理解和控制整个Si（100）表面制备，特别是台阶和畴的形成，这在很大程度上取决于所应用的工艺条件和表面取向差。在这里，我们讨论了邻位，6°取向不良的Si（100）表面的结果相比，更大的梯田，以获得一个一般的看法，如何促进动力学或能量驱动的步骤形成。在主导驱动力的控制下，可以制备出具有“A-型”（1 × 2）或“B-型”（2 × 1）主要畴的单氢化物Si（100）表面，这一点我们用RAS以及低能电子衍射、扫描隧道显微镜和傅里叶变换红外光谱证实。与所有其他表面相反，邻近B-型Si（100）表面的有序DB双层台阶导致台阶相关的、类似导数的RAS信号。在一般情况下，我们确认，高氢气压力促进动力学驱动的过程，而能量的影响随着切边的幅度增加。
In chemical vapor ambience, Si(100) surfaces and hydrogen are strongly interacting with each other at relevant process temperatures. Energetic considerations cannot solely describe step and terrace formation sufficiently, as the formation of equilibrium surface reconstructions can be counteracted by surface kinetics. In recent years, the combination of in situ reflection anisotropy spectroscopy (RAS) and complementary UHV‐based surface sensitive techniques helped to understand and control the entire Si(100) surface preparation, in particular step and domain formation, which strongly depend on the applied process conditions and surface misorientation. Here, we discuss vicinal, 6° misoriented Si(100) surfaces in comparison to results on larger terraces in order to derive a general view on how to promote either a kinetically or an energetically driven step formation. Dictated by the dominant driving force, monohydride Si(100) surfaces with “A‐type” (1 × 2) or “B‐type” (2 × 1) majority domain can be prepared, as we confirm with RAS as well as low energy electron diffraction, scanning tunneling microscopy and Fourier‐transform infrared spectroscopy. Well‐ordered DB double layer steps at the vicinal B‐type Si(100) surface cause a step‐related, derivative‐like RAS signal, in contrast to all other surfaces. In general, we confirm that high H2 pressures promote kinetically driven processes, while the impact of energetics increases with offcut magnitude.
GaP/Si(001)异质界面原子电子结构从头算密度泛函理论研究
影响因子：
3.7
作者：
O. Romanyuk;O. Supplie;T. Susi;M. M. May;T. Hannappel
通讯作者：
T. Hannappel
掩埋半导体异质界面电子带的相干声子光谱表征
影响因子：
4
作者：
K. Ishioka;K. Brixius;A. Beyer;A. Rustagi;C. J. Stanton;W. Stolz;K. Volz;U. Höfer;H. Petek
通讯作者：
H. Petek