Effects of Ag doping on thermoelectric properties of Zn4Sb3 at low temperatures

Effects of Ag doping on thermoelectric properties of Zn4Sb3 at low temperatures
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Ag掺杂对Zn4Sb3低温热电性能的影响

DOI:
10.1016/j.jallcom.2009.09.058
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发表时间:
2010-01
影响因子:
6.2
通讯作者:
--
中科院分区:
材料科学2区
文献类型:
--
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研究了掺银化合物(Zn 1-xAgx)4Sb 3(x=0,0.0025,0.005,0.01)在15 ~ 300 K温度范围内的热电性能。结果表明,中等掺杂(Zn 1-xAgx)4Sb 3(x=0.0025和0.005)的低温(T<300 K)热导率较Zn 4Sb 3显著降低,这是由于杂质(掺杂剂)对声子的散射增强所致.电阻率和Seebeck系数随Ag含量的增加先增大后减小,这可能是由于Ag掺杂量的增加导致Zn占据的位置不同,从而导致载流子浓度的变化。此外,轻掺杂化合物(Zn0.995Ag0.005)4Sb 3由于其电阻率和热导率的改善而表现出最佳的热电性能,其优值(300 K)ZT是本研究中获得的β-Zn 4Sb 3的约1.3倍。目前的研究结果表明,适当的Ag掺杂在Zn 4Sb 3是一个有前途的方式来改善其热电性能。
The thermoelectric properties of Ag-doped compounds (Zn1−xAgx)4Sb3(x=0, 0.0025, 0.005, 0.01) have been studied at the temperatures from 15 to 300K. The results indicate that low-temperature (T<300K) thermal conductivity of the moderately doped (Zn1−xAgx)4Sb3(x=0.0025 and 0.005) reduced remarkably as compared with that of Zn4Sb3due to enhanced impurity (dopant) scattering of phonons. Electrical resistivity and Seebeck coefficient were found to increase first and then decrease obviously with the increase in the Ag content, which could be ascribed to the change of carrier concentration presumably due to different Zn positions occupied by Ag upon increasing doping content. Moreover, the lightly doped compound (Zn0.995Ag0.005)4Sb3exhibited the best thermoelectric performance due to the improvement in both its electrical resistivity and thermal conductivity, whose figure of merit (at 300K), ZT, is about 1.3 times larger than that of β-Zn4Sb3obtained in the present study. Present results suggest that proper Ag doping in Zn4Sb3is a promising way of improving its thermoelectric properties.
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