Silicon Minority-carrier Lifetime Degradation During Molecular Beam Heteroepitaxial III-V Material Growth
Silicon Minority-carrier Lifetime Degradation During Molecular Beam Heteroepitaxial III-V Material Growth
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分子束异质外延 III-V 族材料生长过程中硅少数载流子寿命的退化
DOI：
10.1016/j.egypro.2016.07.027
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
M. Bertoni
中科院分区：
文献类型：
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作者：
L. Ding;Chaomin Zhang;Tine U. Nærland;N. Faleev;C. Honsberg;M. Bertoni
在硅上集成 III-V 材料的器件（硅是器件的有源部件）开发的一个主要障碍是保持其电子质量。在这篇文章中，我们报告了我们的努力，以确定在我们的分子束外延（MBE）系统中磷化镓异质外延生长后硅的本体少数载流子寿命严重下降背后的机制。我们发现寿命下降发生在阈值温度 500 °C 时；我们将增加的复合率归因于来自 MBE 室环境的外在、快速扩散的杂质。杂质可以通过磷扩散被吸收，从而导致寿命恢复。此外，我们根据具体的实验观察缩小了污染物的范围，并将我们的假设与依赖于注入的寿命光谱的建模进行了比较。最后，我们表明，用牺牲氮化硅薄膜涂覆硅晶圆有助于显着减少污染，并为在硅上成功生长 III-V 族提供一条途径。
A major hindrance to the development of devices integrating III-V materials on silicon, where it is an active component of the device, is the preservation of its electronic quality. In this contribution, we report on our effort to identify the mechanism behind the severe decrease in the bulk minority-carrier lifetime of silicon after heteroepitaxial growth of gallium phosphide, in our molecular beam epitaxy (MBE) system. We identify that the drop in lifetime occurs at a threshold temperature of 500 °C; we assign the increased recombination rate to extrinsic, fast-diffusing impurities coming from the MBE chamber environment. Impurities can be gettered by phosphorous diffusion, leading to a lifetime recovery. Moreover, we narrow the list of contaminants based on specific experimental observations and compare our hypothesis to modeling of injection-dependent lifetime spectra. Finally we show that coating the silicon wafer with a sacrificial silicon nitride film helps significantly to reduce contamination and provides a path to successful III-V growth on silicon.