Critical flux ratio of hydrogen radical to film precursor in microcrystalline silicon deposition for solar cells
Critical flux ratio of hydrogen radical to film precursor in microcrystalline silicon deposition for solar cells
复制标题
太阳能电池微晶硅沉积中氢自由基与薄膜前驱体的临界通量比
DOI：
10.1063/1.4764065
复制
发表时间：
2012
影响因子：
4
通讯作者：
M. Hori
中科院分区：
文献类型：
--
作者：
Y. Abe;A. Fukushima;K. Takeda;H. Kondo;K. Ishikawa;M. Sekine;M. Hori
研究了等离子体增强化学气相沉积生长的薄膜硅的性质，讨论了氢自由基流量与薄膜前驱体流量的关系。用真空紫外激光吸收光谱测量了SiH4/H2电容耦合等离子体中H自由基的绝对密度和平移温度。根据计算结果估算了表面反应的有效氢自由基通量。根据沉积速率估算了有效的薄膜前驱体的沉积通量，从而确定了获得合适薄膜性能的H自由基与薄膜前驱体的临界通量比约为65-70。
The properties of thin-film silicon grown by plasma enhanced chemical vapor deposition were investigated with respect to the flux ratio of hydrogen radical to film precursor. The absolute density and translational temperature of H radicals in SiH4/H2 capacitively coupled plasma were measured using vacuum ultraviolet laser absorption spectroscopy. The flux of effective H radicals to the surface reactions was estimated from the results. The flux of effective film precursor for deposition was estimated from the deposition rate, so that the critical flux ratio of H radicals to film precursor to obtain suitable film properties was identified to be approximately 65–70.