Microscopic study of thermoelectric In-doped SnTe
Microscopic study of thermoelectric In-doped SnTe
复制标题
热电In掺杂SnTe的微观研究
DOI：
10.1088/1361-6528/aabb0f
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发表时间：
2018-06-29
期刊：
影响因子：
3.5
通讯作者：
Ge, Binghui
中科院分区：
文献类型：
--
作者：
Nan, Pengfei;Liu, Ruibin;Ge, Binghui
SnTe是一种与PbTe同构的p型热电材料，它是一种潜在的环境友好的替代品。通过在SnTe晶格中掺杂In，可以显著降低SnTe的热导率，提高热电转换效率。In掺杂的SnTe样品中存在大量的沉淀物;基于原子分辨率的高角度环形暗场图像和电子能量损失谱，这些沉淀物被确定为In 2 Te 3的锌-锡相。通过几何相位分析，讨论了一种新的声子散射机制。
SnTe is a p-type thermoelectric material that is isostructural with PbTe, for which it is a potential environmentally friendly replacement. By doping the SnTe lattice with In, the thermal conductivity of SnTe can be significantly reduced and the thermoelectric conversion efficiency improved. A large number of precipitates were present in the In-doped SnTe samples; based on atomic-resolution high-angle annular dark-field images and electron energy loss spectra, these precipitates were identified as the zinc-blende phase of In2Te3. Through geometry phase analysis, a new phonon scattering mechanism is discussed.