High-quality InGaAs films bonded on Si substrate with a thin polycrystalline Si intermediate layer
High-quality InGaAs films bonded on Si substrate with a thin polycrystalline Si intermediate layer
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DOI：
10.1016/j.apsusc.2023.157296
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发表时间：
2023-04
影响因子：
6.7
通讯作者：
J. Jiao;Xiaoqiang Chen;Yingjie Rao;Ruoyun Ji;Liqiang Yao;Fuxiu He;S. Ke;Wei Huang;Cheng Li;Guangyang Lin;Songyan Chen
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文献类型：
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作者：
J. Jiao;Xiaoqiang Chen;Yingjie Rao;Ruoyun Ji;Liqiang Yao;Fuxiu He;S. Ke;Wei Huang;Cheng Li;Guangyang Lin;Songyan Chen
本文报道了在低温（300 ℃）条件下用键合法在Si衬底上制备高质量InGaAs薄膜的研究。在InGaAs和Si之间引入薄的多晶Si（poly-Si）夹层，以阻挡晶格失配并利用其无序的晶体取向和增益边界吸收在键合界面处产生的气泡副产物。为了实现高的键合强度，氩等离子体处理前的预键合工艺的InGaAs和多晶硅表面。通过使用后湿法蚀刻，可以去除剥离的InGaAs膜的表面附近的缺陷富集区域，该缺陷富集区域最初是由外延生长期间InGaAs和InP之间的热失配引起的。结果，制备了具有1.05MPa接合强度和无气泡接合界面的Si基InGaAs膜。缺陷区厚度为1.2 μ m。在对缺陷区域进行刻蚀后，获得了高质量的1.8 μ m厚的Si基InGaAs薄膜，XRD半高宽为94 arcsec。结果表明，该方法在Si衬底上制备高质量III-V族材料方面具有良好的应用前景，为低噪声InGaAs/Si PIN光电二极管和超低暗电流InGaAs/Si雪崩光电二极管的制备提供了一种有前景的方法。
We report the fabrication of high-quality InGaAs films on Si by wafer bonding at low temperatures (300 ℃). A thin polycrystalline Si (poly-Si) interlayer is introduced between InGaAs and Si to block the lattice mismatch and absorb the bubble by-products produced at the bonded interface using its disordered crystal orientation and gain boundaries. To achieve a high bonding strength, argon plasma treatment was employed on InGaAs and poly-Si surfaces before the pre-bonding process. By using post-wet etching, a defect-rich region near the surface of exfoliated InGaAs film that was initially caused by the thermal mismatch between InGaAs and InP during epitaxy growth can be removed. As a result, a Si-based InGaAs film with a 1.05 MPa bonding strength and bubble-free bonding interface was produced. The defective region is 1.2 μm-thick. After etching the defective area, a high-quality, 1.8 μm-thick Si-based InGaAs film was obtained with an XRD FWHM of 94 arcsec. The results reveal that this method is prospective for the fabrication of high-quality III-V materials on Si, proving that a prospective approach for the fabrication of low-noise InGaAs/Si PIN photodiodes and InGaAs/Si avalanche photodiodes with ultralow dark currents.