Atomistic simulation on the phase transformation of silicon under nonhydrostatic stress
Atomistic simulation on the phase transformation of silicon under nonhydrostatic stress
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DOI：
10.1143/jjap.46.5924
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发表时间：
2007-09-01
期刊：
影响因子：
--
通讯作者：
Kitamura, Takayuki
中科院分区：
文献类型：
--
作者：
Jeong, Seong-Min;Kitamura, Takayuki
Silicon transforms from the diamond cubic structure (Si I) to the beta-tin structure (Si II) under mechanical stress. The phase transition is affected by the stress state. In this study, we conduct an atomistic simulation to determine the ideal phase transition criterion of silicon under nonhydrostatic stress. We also verify the effects of nonequivalent transverse stress and non-< 100 >-oriented transverse stress. As a result, we find that the magnitude of transverse stress mainly affects the phase transition, but both transverse differential stress and non < 100 >-oriented transverse stress have a negligible little effect.
