On the width of the recombination zone in ambipolar organic field effect transistors
On the width of the recombination zone in ambipolar organic field effect transistors
复制标题
双极有机场效应晶体管复合区宽度的研究
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
R. Janssen
中科院分区：
文献类型：
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作者：
M. Kemerink;Dsh Dimitri Charrier;E. Smits;Sgj Simon Mathijssen;D. Leeuw;R. Janssen
有机发光场效应晶体管的性能受复合区的宽度的强烈影响。我们提出了一个分析模型的重组配置文件。通过假设朗之万复合，发现复合区宽度W由W =4.34dδ给出，其中d和δ分别为栅极电介质和积累层厚度。该模型比较有利的数值计算和测量的表面电位分布的一个实际的双极器件。
The performance of organic light emitting field effect transistors is strongly influenced by the width of the recombination zone. We present an analytical model for the recombination profile. By assuming Langevin recombination, the recombination zone width W is found to be given byW=4.34dδ, with d and δ the gate dielectric and accumulation layer thicknesses, respectively. The model compares favorably to both numerical calculations and measured surface potential profiles of an actual ambipolar device.