Atomic-scale polarization switching in wurtzite ferroelectrics

Atomic-scale polarization switching in wurtzite ferroelectrics
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纤锌矿铁电体的原子尺度极化转换

DOI:
10.1126/science.adh7670
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发表时间:
2023
期刊:
影响因子:
56.9
通讯作者:
E. Dickey
E. Dickey
中科院分区:
综合性期刊1区
文献类型:
--
作者:
S. Calderon;J. Hayden;Steven M. Baksa;William Tzou;S. Trolier;I. Dabo;J. Maria;E. Dickey

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铁电纤锌矿有可能彻底改变现代微电子,因为它们很容易与多种主流半导体平台集成。然而,为了与互补金属氧化物半导体(CMOS)电子器件兼容,逆转极化方向并解锁电子和光学功能所需的电场需要大幅减小。为了了解这一过程,我们用扫描透射电镜观察并量化了具有代表性的铁电纤锌矿(Al0.94B0.06N)在原子尺度上的实时极化开关。分析揭示了纤锌矿基面上皱巴巴的氮化铝/硼环逐渐变平并呈瞬态非极性几何形状的极化反转模型。独立的第一性原理模拟揭示了通过反极相逆转过程的细节和能量学。该模型和局部机制的理解是在这种新兴材料类别中进行性能工程努力的关键的第一步。氮基铁电纤锌矿是一种新兴的晶体家族,作为现代微电子的开关材料非常有吸引力。这些材料的化学性质与目前的半导体平台非常匹配。Calderon等人使用一系列表征工具来准确确定由铝、硼和氮组成的代表性纤锌矿是如何经历极化开关的。更详细地了解这一过程对于降低这些材料在其中转换的电场至关重要,因为这是将它们应用到应用中的限制因素。纤锌矿铁电体的实时开关研究揭示了一种反极性亚稳态介导极化反转。
Ferroelectric wurtzites have the potential to revolutionize modern microelectronics because they are easily integrated with multiple mainstream semiconductor platforms. However, the electric fields required to reverse their polarization direction and unlock electronic and optical functions need substantial reduction for operational compatibility with complementary metal-oxide semiconductor (CMOS) electronics. To understand this process, we observed and quantified real-time polarization switching of a representative ferroelectric wurtzite (Al0.94B0.06N) at the atomic scale with scanning transmission electron microscopy. The analysis revealed a polarization reversal model in which puckered aluminum/boron nitride rings in the wurtzite basal planes gradually flatten and adopt a transient nonpolar geometry. Independent first-principles simulations reveal the details and energetics of the reversal process through an antipolar phase. This model and local mechanistic understanding are a critical initial step for property engineering efforts in this emerging material class. Description Editor’s summary Nitride-based ferroelectric wurtzites are an emerging family of crystals that are highly attractive as switching materials for modern microelectronics. The chemistry of these materials is a good match for current semiconductor platforms. Calderon et al. used an array of characterization tools to determine exactly how a representative wurtzite composed of aluminum, boron, and nitrogen undergoes polarization switching. A more detailed understanding of this process is vital for lowering the electric field under which these materials switch, because this is a limiting factor in moving them into applications. —Brent Grocholski Real-time switching studies in wurtzite ferroelectrics reveal that an antipolar metastable state mediates polarization inversion.
DOI: 10.1038/s41598-018-32489-w
发表时间: 2018-09-20
期刊: Scientific reports
影响因子: 4.6
作者:
Stolyarchuk N;Markurt T;Courville A;March K;Zúñiga-Pérez J;Vennéguès P;Albrecht M
通讯作者: Albrecht M
DOI: 10.1063/5.0058928
发表时间: 2021-09
期刊: APL Materials
影响因子: 6.1
作者:
Stephen D. Funni;Z. Yang;M. Cabral;C. Ophus;X. M. Chen;E. Dickey
通讯作者: Stephen D. Funni;Z. Yang;M. Cabral;C. Ophus;X. M. Chen;E. Dickey