Conversion Behavior of Threading Screw Dislocations on C Face with Different Surface Morphology During 4H-SiC Solution Growth
Conversion Behavior of Threading Screw Dislocations on C Face with Different Surface Morphology During 4H-SiC Solution Growth
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DOI：
10.1021/acs.cgd.6b01107
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发表时间：
2016-11-01
影响因子：
3.8
通讯作者：
Ujihara, Toru
中科院分区：
文献类型：
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作者：
Xiao, Shiyu;Harada, Shunta;Ujihara, Toru
在SiC溶液生长过程中，由于宏观台阶的推进，导致螺旋位错（TSD）向基面缺陷的转化，是提高晶体质量的关键因素。我们通过在纯Si溶剂中加入5原子%的Ti来改变4 H-SiC C面溶液生长的表面形貌，包括宏观台阶，实现了TSD转化。同步加速器X射线形貌显示，随着S原子% Ti的添加，TSD转化的可能性增加到约10%。此外，TSD转换比取决于宏台阶边缘的形状。缓坡几乎不发生TSD转换。用位错的弹性能来解释台阶形状对TSD转换行为的影响。
The conversion of threading screw dislocations (TSDs) to defects on the basal plane during SiC solution growth caused by macrostep advance is a key factor to improve crystal quality. We realized the TSD conversion in 4H-SiC C face solution growth by modification of the surface morphology including macrosteps by addition of 5 atom % Ti into pure Si solvent. Synchrotron X-ray topography revealed that the possibility of TSD conversion increased to about 10% with the addition of S atom % Ti. In addition, the TSD conversion ratio depends on the shape of the macrostep edge. The gentle slope hardly made TSD conversion. The elastic energy of dislocations in anisotropy crystals was postulated as an explanation for the influence of step shape on TSD conversion behavior.