Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
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DOI：
10.1063/1.2824758
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发表时间：
2008-01-21
影响因子：
4
通讯作者：
Muth, J. F.
中科院分区：
文献类型：
--
作者：
Suresh, A.;Muth, J. F.
当考虑薄膜晶体管的非传统沟道材料时，偏置应力对晶体管性能的影响是重要的。对铟镓锌氧化物透明薄膜晶体管施加栅极偏置应力，发现在不改变场效应迁移率或亚阈值栅极电压摆幅的情况下，引起并行阈值电压偏移。阈值电压的变化是crumicically依赖于偏置应力的持续时间，这意味着电荷隧穿机制导致被捕获的负电荷屏蔽施加的栅极电压。(C)2008年美国物理学会。
The effects of bias stress on transistor performance are important when considering nontraditional channel materials for thin film transistors. Applying a gate bias stress to indium gallium zinc oxide transparent thin film transistors was found to induce a parallel threshold voltage shift without changing the field effect mobility or the subthreshold gate voltage swing. The threshold voltage change is logarithmically dependent on the duration of the bias stress implying a charge tunneling mechanism resulting in trapped negative charge screening the applied gate voltage. (C) 2008 American Institute of Physics.