MOVPE growth of GaN on Si substrate with 3C-SiC buffer layer
MOVPE growth of GaN on Si substrate with 3C-SiC buffer layer
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DOI：
10.7567/jjap.53.05fl09
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发表时间：
2014-04
影响因子：
1.5
通讯作者：
M. Katagiri;H. Fang;H. Miyake;K. Hiramatsu;H. Oku;H. Asamura;K. Kawamura
中科院分区：
文献类型：
--
作者：
M. Katagiri;H. Fang;H. Miyake;K. Hiramatsu;H. Oku;H. Asamura;K. Kawamura
研究了在Si衬底上生长GaN时，3C-SiC缓冲层厚度对GaN生长的影响。用金属有机气相外延生长了厚度分别为2.0和4.5µm的GaN样品。GaN样品在生长初期就观察到了孤岛，随着生长时间的延长，孤岛逐渐变大，然后相互融合。GaN样品的结晶质量受3C-SiC缓冲层厚度的影响，并随其厚度的增加而提高。这表明，厚GaN生长的晶体质量趋势不同于最初的GaN生长。此外，采用100 nm厚的碳化硅缓冲层生长的GaN样品具有较低的初始曲率，对于4.5µm厚的GaN，在GaN(0004)晶面和晶面上的结晶质量分别为389和460弧秒。
We investigated the effect of the thickness of a 3C-SiC buffer layer on the growth of GaN on a Si substrate. GaN samples with thicknesses of 2.0 and 4.5 µm were grown by metal organic vapor phase epitaxy. Islands were observed at the initial growth of the GaN samples, and they became larger and then coalesced with each other with increasing growth time. The crystalline quality of the GaN samples was affected by the thickness of the 3C-SiC buffer layer and was improved by increasing their thickness. This indicates that the crystalline quality trend for thick GaN growth is different from that for initial GaN growth. Moreover, the GaN sample with a 100-nm-thick SiC buffer layer had a low initial curvature, and the crystalline qualities on GaN(0004) and planes were 389 and 460 arcsec for 4.5-µm-thick GaN growth, respectively.