The High Quantum Efficiency of Exponential-Doping AlGaAs/GaAs Photocathodes Grown by Metalorganic Chemical Vapor Deposition
The High Quantum Efficiency of Exponential-Doping AlGaAs/GaAs Photocathodes Grown by Metalorganic Chemical Vapor Deposition
复制标题
金属有机化学气相沉积法生长的指数掺杂 AlGaAs/GaAs 光电阴极的高量子效率
DOI：
10.1088/0256-307x/30/4/044205
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发表时间：
2013-04-01
影响因子：
3.5
通讯作者：
Chang Ben-Kang
中科院分区：
文献类型：
--
作者：
Zhang Yi-Jun;Zhao Jing;Chang Ben-Kang
利用金属有机化学气相沉积（MOCVD）技术，成功地将指数掺杂结构应用于AlGaAs/GaAs光电阴极的制备。实验结果表明，与分子束外延生长的光电阴极相比，MOCVD生长的指数掺杂光电阴极在整个波段内的量子效率得到了显著提高。由于改善了内置电场和阴极性能参数，mocvd生长的透射模式和反射模式AlGaAs/GaAs光电阴极的光电特性在感兴趣的波长区域内是不同的。
An exponential-doping structure is successfully applied to the preparation of AlGaAs/GaAs photocathodes through the metalorganic chemical vapor deposition (MOCVD) technique. The experimental results show that the quantum efficiency in the entire waveband region for the exponential-doping photocathodes grown by MOCVD is remarkably enhanced as compared to those grown by molecular beam epitaxy. As a result of the improved built-in electric fields and cathode performance parameters, the photoemission characteristics for the MOCVD-grown transmission-mode and reflection-mode AlGaAs/GaAs photocathodes are different over the wavelength region of interest.