Inhibition of copper corrosion by bis-(1,1′-benzotriazoly)-α,ω-diamide compounds in aerated sulfuric acid solution
Inhibition of copper corrosion by bis-(1,1′-benzotriazoly)-α,ω-diamide compounds in aerated sulfuric acid solution
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DOI：
10.1016/j.apsusc.2005.07.010
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发表时间：
2006-05
影响因子：
6.7
通讯作者：
Daquan Zhang;Li-xin Gao;Guo‐ding Zhou
中科院分区：
文献类型：
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作者：
Daquan Zhang;Li-xin Gao;Guo‐ding Zhou
在Ar+激光（λL= 488 nm）作用下，以羰基铁（Fe（CO）5）为原料，在功率密度约为102 W/cm 2，蒸汽压为666 Pa的条件下，利用激光化学气相沉积（LCVD）技术在Si衬底表面制备了铁氧化物纳米结构薄膜。用扫描电子显微镜（SEM）和原子力显微镜（AFM）对沉积膜的表面形貌和起伏进行了分析。结果表明，它们具有团簇结构，平均粒径不超过100 nm。发现沉积膜越厚，形成的团簇尺寸越大，且具有更多的氧化物和较高的氧化相。膜厚（d）为10和28 nm。在170- 340 K温度范围内，薄膜的半导体性质由不同氧化相的氧化物含量决定。在1.6× 103 V/m的电场作用下，禁带宽度E_g在0.30-0.64eV范围内变化，与薄膜中的氧化物含量有关。在45 V/m的电场下，带隙Eg在0.46-0.58eV范围内变化。在1.6× 103 V/m的电场下，由铁氧化物中杂质决定的禁带宽度Ei在0.009-0.026eV范围内变化，在45 V/m的电场下，由铁氧化物中杂质决定的禁带宽度Ei在0-0.16eV范围内变化。这些窄带隙半导体薄膜表现出量子尺寸效应。
Nanostructures based on iron oxides in the form of thin films were synthesized while laser chemical vapor deposition (LCVD) of elements from iron carbonyl vapors (Fe(CO)5) under the action of Ar+laser radiation (λL=488nm) on the Si substrate surface with power density about 102W/cm2and vapor pressure 666Pa. Analysis of surface morphology and relief of the deposited films was carried out with scanning electron microscopy (SEM) and atomic force microscopy (AFM). This analysis demonstrated their cluster structure with average size no more than 100nm. It was found out that the thicker the deposited film, the larger sizes of clusters with more oxides of higher oxidized phases were formed. The film thickness (d) was 10 and 28nm. The deposited films exhibited semiconductor properties in the range 170–340K which were stipulated by oxide content with different oxidized phases. The width of the band gap Egdepends on oxide content in the deposited film and was varied in the range 0.30–0.64eV at an electrical field of 1.6×103V/m. The band gap Egwas varied in the range 0.46–0.58eV at an electrical field of 45V/m. The band gap which is stipulated by impurities in iron oxides Eiwas varied in the range 0.009–0.026eV at an electrical field of 1.6×103V/m and was varied in the range 0–0.16eV at an electrical field 45V/m. These narrow band gap semiconductor thin films displayed of the quantum dimensional effect.