Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions
Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions
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不同离子注入的n-GaN光致发光光谱中的宽带黄色发光
DOI：
10.7498/aps.55.5487
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发表时间：
2006-10
期刊：
影响因子：
--
通讯作者：
You Wei
中科院分区：
文献类型：
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作者：
Liu Zheng-Min;Li Gong-Ping;Zhang Li-Min;Lin De-Xu;Zhang Yu;Zhang Xiao-Dong;You Wei
在室温下用氧、氮、镁、硅和镓离子注入n型氮化镓（GaN）膜，剂量范围为10（13）至10（16）cm（-2）。所有注入的样品在流动的氮气环境中在900摄氏度下退火10分钟。利用室温下拍摄的光致发光（PL）谱，系统地研究了注入离子对宽黄光发光（YL）带的影响。根据我们提出的半经验模型，推导出一个计算公式，并对实验数据进行了分析，确定了注入离子对YL带强度的影响。我们可以确认Mg（10（16）/cm（2））和Si（= 10（15）/cm（2））注入离子对YL带的影响大于N和O注入离子。
The n-type gallium nitride (GaN) films were implanted with oxygen, nitrogen, magnesium, silicon and gallium ions at room temperature in the dose range from 10(13) to 10(16) cm(-2). All implanted samples were annealed at 900 degrees C for 10 min in a flowing nitrogen environment. The effects of the implantation ions on the broad yellow luminescence (YL) band were systematically investigated using the photoluminescence (PL) spectra taken at room temperature. A formula based on a semi-empirical model which was proposed by us was deduced, and with it, the experimental data was analyzed and the influence of implanted ions on the intensity of YL band was determined. We can confirm that the effects of the Mg (10(16)/cm(2)) and Si ( = 10(15)/cm(2)) implanted ions on the YL band are larger than that of the N and O implanted ions.