Small angle x-ray scattering for sub-100 nm pattern characterization
Small angle x-ray scattering for sub-100 nm pattern characterization
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DOI：
10.1063/1.1622793
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发表时间：
2003-11-10
影响因子：
4
通讯作者：
Barclay, GG
中科院分区：
文献类型：
--
作者：
Jones, RL;Hu, T;Barclay, GG
使用小角度 X 射线散射演示了具有纳米级分辨率的亚 100 nm 光刻图案的表征。所采用的透射散射几何结构有可能实现半导体工业、有机和无机纳米级器件以及三维结构的未来技术节点的高通量测量。该方法通过使用同步加速器 X 射线源对一系列聚合物光刻胶光栅进行表征来演示。使用最小建模来提取周期性和线宽等数量。简要讨论了基于实验室的 X 射线系统的附加量和潜力。 (C) 2003 年美国物理研究所。
Characterization of sub-100 nm photolithographic patterns with nanometer scale resolution is demonstrated using small angle x-ray scattering. The transmission scattering geometry employed potentially enables high throughput measurements for future technology nodes of the semiconductor industry, organic and inorganic nanoscale devices, and three-dimensional structures. The method is demonstrated through the characterization of a series of polymer photoresist gratings using a synchrotron x-ray source. Quantities, such as periodicity and line width, are extracted using minimal modeling. Additional quantities and the potential of a laboratory-based x-ray system are briefly discussed. (C) 2003 American Institute of Physics.