Interfacial reconstruction of 2D/2D ZnIn2S4/HNb3O8 through Nb-S bonds for efficient photocatalytic H-2 evolution performance

Interfacial reconstruction of 2D/2D ZnIn2S4/HNb3O8 through Nb-S bonds for efficient photocatalytic H-2 evolution performance
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通过 Nb-S 键重构 2D/2D ZnIn2S4/HNb3O8 界面,实现高效光催化 H-2 析出性能

DOI:
10.1016/j.matdes.2021.110007
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发表时间:
2021
影响因子:
8.4
通讯作者:
Liang Shijing
Liang Shijing
中科院分区:
材料科学1区
文献类型:
--
作者:
Xia Yuzhou;Zhu Shuying;Liang Ruowen;Huang Renkun;Yan Guiyang;Liang Shijing

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复合光催化剂的异质结结构具有紧密的界面和足够的接触面积,是获得上级光生载流子迁移效率的关键。然而,这仍然是一个巨大的挑战。本文采用两步合成法成功制备了具有强Nb-S键连接的二维/二维面内界面的ZnIn 2S 4/HNb 3 O 8异质结。由于化学性质的相似性,在水热条件下,ZnIn 2S 4的S前驱体被HNb 3 O 8表面的O缺陷捕获,并在2D/2D界面形成Nb-S键。独特的二维/二维结构赋予了异质结大的界面面积和Nb-S键作为高速通道促进了界面电子转移。Kelvin探针测试结果表明,在界面上形成了一个从HNb 3 O 8到ZnIn 2S 4的电场,该电场是界面电荷转移的驱动力。结果,光激发电子可以定向地迁移穿过界面,从而促进光催化活性。最佳析氢量为95.2 mmol g−1,相当于ZnIn 2S 4的10.8倍。化学键合异质结的原位构建将为设计高效异质结光催化剂提供参考。
Heterojunction structure of the composite photocatalyst with the intimate interface and sufficient contact areas is the key to achieve superior photogenerated charge carriers migration efficiency. However, it still remains a great challenge. Herein, a novel ZnIn2S4/HNb3O8heterojunction with a strong Nb-S bond connected 2D/2D in-plane interface is successfully fabricated via a two-step synthesis method. Due to the similarity of the chemical property, S precursors for ZnIn2S4are preferred trapped by the O defects on HNb3O8, which induce the formation of Nb-S bond in the 2D/2D interface under the hydrothermal process. The unique 2D/2D structure endows the heterojunction with large interfacial area and the Nb-S bond as high-speed channels facilitate the interfacial electrons transfer. Furthermore, Kelvin probe test demonstrates an interfacial electric field oriented from HNb3O8to ZnIn2S4is formed as driving force for the interface charge transfer. As a result, the photoexcited electrons may directionally migrate across the interface, thereby promoting the photocatalytic activity. The optimal H2evolution amount reaches 95.2 mmol g−1, corresponding to 10.8 times of ZnIn2S4. The in-situ construction of chemical bonded heterojunction will provide a reference for designing high-efficiency heterojunction photocatalyst.