High Bandwidth Capacitance Efficient Silicon MOS Modulator
High Bandwidth Capacitance Efficient Silicon MOS Modulator
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DOI：
10.1109/jlt.2020.3026945
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发表时间：
2021-01-01
影响因子：
4.7
通讯作者：
Thomson, David J.
中科院分区：
文献类型：
--
作者：
Zhang, Weiwei;Debnath, Kapil;Thomson, David J.
本文分析和优化了绝缘层厚度t（ox）达40 nm的水平硅绝缘层硅电容（H-SISCAP）移相器结构。该移相器具有约0.5 fF/μ m的有效电容（C-eff）和1.8 V中心点cm的相变效率，其中电容和相位效率之间的平衡与基于硅脊形波导的耗尽型移相器相当。硅马赫-曾德尔干涉仪（MZI）调制器与200 μ m长的H-SISCAP移相器优化TM偏振光已被制造和证明与3 dB EO带宽超过35 GHz和本征H-SISCAP RC带宽约150 GHz。该调制器在NRZ-OOK工作模式下，可显示数据速率高达60 Gbit/s（无检测均衡）和72 Gbit/s（2抽头均衡）的开眼图。所展示的H-SISCAP移相器为构建高带宽分段、行波和紧凑型环形谐振器调制器铺平了道路，可用于光发射机、微波发生器和激光雷达应用等。
This article analysed and optimised horizontal Silicon insulator Silicon capacitor (H-SISCAP) phase shifter structures with insulator thickness t(ox) up to 40 nm. The phase shifter has an effective capacitance (C-eff) around 0.5 fF/mu m and a phase change efficiency 1.8 V center dot cm, of which the balance between capacitance and phase efficiency is comparable with silicon rib waveguide based depletion type phase shifters. Silicon Mach-Zehnder interferometer (MZI) modulators with 200 mu m long H-SISCAP phase shifters optimised for TM polarised light have been fabricated and demonstrated with a 3 dB EO bandwidth above 35 GHz and intrinsic H-SISCAP RC bandwidth around 150 GHz. The modulator displays open eye-diagrams for data rates up to 60 Gbit/s without detection equalization and 72 Gbit/s with 2 taps equalization in NRZ-OOK operation. The demonstrated H-SISCAP phase shifter paves the way to build high bandwidth segmented, travelling wave and compact ring resonators modulators for applications of optical transmitters, microwave generations, and LIDAR applications, etc.