Electrical characteristics and carrier transport mechanism for Ti/p-GaN Schottky diodes
Electrical characteristics and carrier transport mechanism for Ti/p-GaN Schottky diodes
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DOI：
10.1007/s13391-012-2175-y
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发表时间：
2013-03
影响因子：
2.4
通讯作者：
Seon-Ho Jang;Ja‐Soon Jang
中科院分区：
文献类型：
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作者：
Seon-Ho Jang;Ja‐Soon Jang
利用电流-电压-温度、导通电压-温度和串联电阻-温度测量，研究了非合金Ti/p-GaN肖特基二极管电特性的温度依赖性。热系数（Kj）和特征温度（T0） atT≥293 K分别为- 4.1 mV/K和65.06 K。有效肖特基势垒高度（SBH）为2.1（±0.03）eV，与理论值吻合较好。根据p- gan层的热降低能带隙、热增加的深能级受体和进一步激活的浅能级受体的增加，描述了界面上可能的载流子输运机制。热理想系数的提高和隧道参数的提高证实了这一点。
The temperature dependence of the electrical characteristics of non-alloyed Ti/p-GaN Schottky diodes was examined using current-voltage-temperature, turn-on voltage-temperature, and series resistance-temperature measurements. The thermal coefficient (Kj) and characteristic temperature (T0) atT≥ 293 K were determined to be −4.1 mV/K and 65.06 K, respectively. The effective Schottky barrier height (SBH) was also determined to be 2.1 (±0.03) eV, which was in good agreement with the theoretical value. The possible carrier transport mechanisms at the interface are described in terms of the thermally decreased energy-band gap ofp-GaN layers, thermally increased deep-level acceptor and increased further-activated-shallow-level acceptor. These were confirmed by the thermally increased ideality factor and high tunnelling parameter.