MOVPE-grown millimeter-wave InGaAs mixer diode technology and characteristics
MOVPE-grown millimeter-wave InGaAs mixer diode technology and characteristics
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MOVPE生长的毫米波InGaAs混频二极管技术和特性
DOI：
10.1109/16.595933
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发表时间：
1997
影响因子：
3.1
通讯作者：
K. Hong
中科院分区：
文献类型：
--
作者：
P. Marsh;D. Pavlidis;K. Hong
从实验和理论上探讨了InGaAs基毫米波混频二极管的优点。InGaAs上的肖特基结在0.25 eV附近表现出势垒（/spl phi//sub B/）。InGaAs的高迁移率有助于1-/spl μ/m n/sup +/ InGaAs层的1.9-5 /spl Ω//平方的低n/sup +/薄层电阻（n/sub s/=1.5/spl times/10/sup 19/ cm/sup-3/，/spl mu//sub n/=1800 cm/sup 2//V/spl middot/s），报道了InGaAs集成混频器/天线的材料生长、制造和表征。铂电镀技术，适用于InGaAs肖特基接触，已提高了理想因子（/spl eta/）和产量相对于传统的蒸发铂。在二极管上施加810 /spl mu/W的本振功率和零直流偏置的情况下，集成InGaAs混频器/天线表现出199 K RF输入双边带噪声温度和相应单边带（SSB）转换损耗的出色二极管性能（L/sub c/）为5.0 dB，LO、RF和IF频率分别为94 GHz、94 GHz/spl plusmn/1.4 GHz和1.4 GHz。同样，InGaAs次谐波集成混频器/天线中的二极管在180 GHz时的等效RF端口双边带（DSB）噪声温度（T/sub mix/）为1058 K，单边带转换损耗为10.2 dB，90 GHz LO功率（PLO）为1.6 mW。与去除了RF耦合和IF损耗的GaAs二极管相比，单端InGaAs噪声温度结果与最先进的GaAs混频器二极管相比在46-100 K范围内，同时需要的LO功率显著降低。
The merits of InGaAs-based millimeter-wave mixer diodes are explored experimentally and theoretically. Schottky junctions on InGaAs exhibit barriers (/spl phi//sub b/) in the neighborhood of 0.25 eV. The high mobility of InGaAs contributes to the low n/sup +/ sheet resistances of 1.9-5 /spl Omega//square for 1-/spl mu/m n/sup +/ InGaAs layers (n/sub s/=1.5/spl times/10/sup 19/ cm/sup -3/, /spl mu//sub n/=1800 cm/sup 2//V/spl middot/s) grown with our in-house Metalorganic Vapor Phase Epitaxy (MOVPE) system, The design, material growth, fabrication, and characterization of InGaAs integrated mixer/antennae are reported. Pt plating technology, adapted here for InGaAs Schottky contacts, has improved the ideality factor (/spl eta/) and yield relative to conventional evaporated Pt. With 810 /spl mu/W of local oscillator power, applied to the diode, and zero DC bias, an integrated InGaAs mixer/antenna demonstrated an excellent diode performance of 199 K RF input double-sideband noise temperature with a corresponding single-sideband (SSB) conversion loss (L/sub c/) of 5.0 dB at LO, RF, and IF frequencies of 94 GHz, 94 GHz/spl plusmn/1.4 GHz, and 1.4 GHz, respectively. Likewise, the diodes in an InGaAs subharmonic integrated mixer/antenna demonstrated an equivalent RF-port double-sideband (DSB) noise temperature (T/sub mix/) of 1058 K and single-sideband conversion loss of 10.2 dB at 180 GHz with a 90-GHz LO power (PLO) of 1.6 mW. Compared to GaAs diodes with RF coupling and IF losses removed, the single-ended InGaAs noise temperature results were within 46-100 K of those for state-of-the-art GaAs mixer diodes while requiring significantly less LO power.