Laser ablation deposition of crystalline copper-phthalocyanine thin films
Laser ablation deposition of crystalline copper-phthalocyanine thin films
复制标题
结晶铜酞菁薄膜的激光烧蚀沉积
DOI：
10.1016/s0169-4332(97)00708-3
复制
发表时间：
1998
影响因子：
6.7
通讯作者：
F. Kannari
中科院分区：
文献类型：
--
作者：
E. Ina;Naotaka Matsumoto;E. Shikada;F. Kannari
针对KrF激光烧蚀法制备的酞菁铜（CuPc）薄膜结晶性差的问题，在沉积过程中采用了三种不同的辅助方法：（1）将衬底温度提高到50°C;（2）用200 μW/cm ~ 2的HeNe激光照射;（3）施加直流电场。当薄膜厚度方向上的直流电场为≤ 50 V/cm时，薄膜的结晶度最高。这种过程中的电极化也适用于4-二烷基氨基-4 ′-硝基芪（DANS）膜。
The poor crystallinity of copper-phthalocyanine (CuPc) thin films fabricated via KrF laser ablation is significantly improved by three different assisting methods applied during deposition: (1) elevating substrate temperature only up to 50°C; (2) irradiating with HeNe laser of ∼200 μW/cm2; (3) applying DC electric field. Highest crystallinity is obtained when the film is deposited under DC electric field of ∼50 V/cm in the direction of film thickness. This in-process electric poling also works for 4-dialkylamino-4′-nitrostilbensen (DANS) film.