Radiation damage annealing (thermal and laser) in Mg implanted GaN
Radiation damage annealing (thermal and laser) in Mg implanted GaN
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DOI：
10.1002/pssc.200461316
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发表时间：
2005-05
期刊：
影响因子：
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通讯作者：
S. Whelan;M. Kelly;Johnny Yan;G. Fortunato
中科院分区：
文献类型：
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作者：
S. Whelan;M. Kelly;Johnny Yan;G. Fortunato
在GaN中进行了镁离子注入。研究了GaN晶体在快速热退火(RTA)和准分子激光退火(ELA)过程中的恢复情况。研究了RTA过程中的损伤退火随植入温度(-150°C(冷)、25°C(RT)和300°C(热))的变化。研究发现，高温下注入的样品比低温下注入的样品形成的损伤更稳定，这是由于注入过程中形成了复杂的缺陷。在室温下对注入镁的GaN进行了ELA损伤退火热处理。结果表明，与RTA(在相似的温度下)相比，ELA过程中的损伤去除得到了增强，这一技术可能被证明是一种可行的替代传统的RTA工艺来去除离子注入GaN中的损伤。(2015Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
Mg ion implantation into GaN has been performed. The crystal recovery in GaN during rapid thermal annealing (RTA) and excimer laser annealing (ELA) has been assessed. Damage annealing during RTA has been investigated as a function of the implant temperature (–150 °C (cold), 25 °C (RT) and 300 °C (hot)). It was found that the damage formed in samples implanted at elevated temperatures is more stable than the damage formed in samples implanted at cold temperatures and this has been explained by the formation of complex defects during implant. Damage annealing during ELA has been performed upon Mg implanted GaN at RT. It has been shown that the damage removal during ELA is enhanced when compared to RTA (at similar temperatures), and this technique may prove a viable alternative to conventional RTA processes for damage removal in ion implanted GaN. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)