Solution-phase deposition and nanopatterning of GeSbSe phase-change materials
Solution-phase deposition and nanopatterning of GeSbSe phase-change materials
复制标题
DOI：
10.1038/nmat1887
复制
发表时间：
2007-05-01
期刊：
影响因子：
41.2
通讯作者：
Jordan-Sweet, Jean
中科院分区：
文献类型：
--
作者：
Milliron, Delia J.;Raoux, Simone;Jordan-Sweet, Jean
具有可逆非晶-结晶相变的硫族化物薄膜已作为光学可重写数据存储介质实现商业化(1,2)，目前集中精力将其集成到电寻址非易失性存储器件（相变随机存取存储器或 PCRAM）(3-5) 中。尽管光学数据存储是通过激光诱导连续薄膜加热来实现的，但电子存储器需要将离散纳米级相变材料特征与读/写电子器件集成。目前，相变薄膜最常通过溅射沉积进行沉积，并通过传统光刻进行图案化(3)。用于晶体管应用的金属硫属化物薄膜最近通过低温溶液相途径沉积(6-9)。在这里，我们扩展了这种方法来制备 GeSbSe 相变材料的薄膜和纳米结构。我们报告了通过在溶液中组合新型前驱体实现的成分变化，GeSbSe 薄膜中相变特性的可调节性。通过激光脉冲退火观察到快速、亚微秒的相位切换。我们还证明，可以填充预图案化的孔来制造尺寸从数百纳米到数十纳米的相变纳米结构，从而提高了制造 PCRAM 器件的灵活性，同时降低了电流要求。
Chalcogenide films with reversible amorphous-crystalline phase transitions have been commercialized as optically rewritable data-storage media(1,2), and intensive effort is now focused on integrating them into electrically addressed non-volatile memory devices (phase-change random-access memory or PCRAM)(3-5). Although optical data storage is accomplished by laser-induced heating of continuous films, electronic memory requires integration of discrete nanoscale phase-change material features with read/write electronics. Currently, phase-change films are most commonly deposited by sputter deposition, and patterned by conventional lithography(3). Metal chalcogenide films for transistor applications have recently been deposited by a low-temperature, solution-phase route(6-9). Here, we extend this methodology to prepare thin films and nanostructures of GeSbSe phase-change materials. We report the ready tuneability of phase-change properties in GeSbSe films through composition variation achieved by combining novel precursors in solution. Rapid, submicrosecond phase switching is observed by laser-pulse annealing. We also demonstrate that prepatterned holes can be filled to fabricate phase-change nanostructures from hundreds down to tens of nanometres in size, offering enhanced flexibility in fabricating PCRAM devices with reduced current requirements.