Injection modulation of p(+)-n emitter junction in 4H-SiC light triggered thyristor by double-deck thin n-base
Injection modulation of p(+)-n emitter junction in 4H-SiC light triggered thyristor by double-deck thin n-base
复制标题
双层薄n基极注入调制4H-SiC光触发晶闸管中的p( )-n发射结
DOI：
10.1088/1674-1056/26/10/108505
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发表时间：
2017
影响因子：
1.7
通讯作者：
Chen Zhiming
中科院分区：
文献类型：
--
作者：
Wang Xi;Pu Hongbin;Liu Qing;Chen Chunlan;Chen Zhiming
为了克服4 H-SiC光触发晶闸管p+-n发射结的空穴注入限制，提出了一种新型的双层薄n基区结构的高压4 H-SiC光触发晶闸管，并通过二维数值模拟进行了验证。在这种新的结构中，传统的薄n基分裂为双层。通过调节上层薄n基区的掺杂浓度和厚度，可以调节p+-n发射结的空穴注入。采用双层薄n基区结构，提高了4 H-SiC光触发晶闸管顶部pnp管的电流增益系数。结果表明，4 H-SiC光触发晶闸管的触发光强和开通延迟时间均减小。仿真结果表明，所设计的10 kV 4 H-SiC光触发晶闸管能够被500 mW/cm 2的紫外光脉冲触发。同时，建议晶闸管的导通延迟时间减少到337 ns。
To overcome hole-injection limitation of p+–n emitter junction in 4H–SiC light triggered thyristor, a novel high-voltage 4H–SiC light triggered thyristor with double-deck thin n-base structure is proposed and demonstrated by two-dimensional numerical simulations. In this new structure, the conventional thin n-base is split to double-deck. The hole-injection of p+–n emitter junction is modulated by modulating the doping concentration and thickness of upper-deck thin n-base. With double-deck thin n-base, the current gain coefficient of the top pnp transistor in 4H–SiC light triggered thyristor is enhanced. As a result, the triggering light intensity and the turn-on delay time of 4H–SiC light triggered thyristor are both reduced. The simulation results show that the proposed 10-kV 4H–SiC light triggered thyristor is able to be triggered on by 500-mW/cm 2 ultraviolet light pulse. Meanwhile, the turn-on delay time of the proposed thyristor is reduced to 337 ns.