Mode structure of the L3 photonic crystal cavity
Mode structure of the L3 photonic crystal cavity
复制标题
DOI：
10.1063/1.2748310
复制
发表时间：
2007-06-11
影响因子：
4
通讯作者：
Hopkinson, M.
中科院分区：
文献类型：
--
作者：
Chalcraft, A. R. A.;Lam, S.;Hopkinson, M.
研究了GaAs L3光子晶体空气桥腔的多重限制模，采用单层InAs量子点作为有源内光源。的能量，品质因数，和前五个模式的发射偏振的理论结果进行比较的实验数据与腔的晶格周期范围从240到270 nm。作者还提出了每个模式的面内场分布。除了众所周知的质量因子的基本模式的改善，他们表明，向外位移的端孔选择性红移模式与大的端孔场重叠，从而重新排序的模式。(c)2007年，美国物理学会。
The authors investigate the multiple confined modes of GaAs L3 photonic crystal air-bridge cavities, using single layers of InAs quantum dots as active internal light sources. Theoretical results for the energies, quality factors, and emission polarizations of the first five modes are compared to experimental data for cavities with lattice periods ranging from 240 to 270 nm. The authors also present in-plane field distributions for each mode. In addition to the well-known quality factor improvement of the fundamental mode, they show that outward displacement of the end-holes selectively redshifts modes with large end-hole-field overlaps, thus reordering the modes. (c) 2007 American Institute of Physics.