Charge-Plasma Based Process Variation Immune Junctionless Transistor
Charge-Plasma Based Process Variation Immune Junctionless Transistor
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DOI：
10.1109/led.2013.2297451
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发表时间：
2014-03-01
影响因子：
4.9
通讯作者：
Singh, Jawar
中科院分区：
文献类型：
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作者：
Sahu, Chitrakant;Singh, Jawar
在这封信中，我们首次报告了一种独特的方法，实现无结晶体管（JLT）没有掺杂（掺杂少）的硅薄膜。采用电荷等离子体的概念，诱导的n-区的源极和漏极的n-沟道JLT使用适当的金属功函数电极的形成。所提出的设备的电气特性进行了模拟和比较，与传统的掺杂相同尺寸的JLT。在传统的JLT中，沟道掺杂浓度通常保持高以确保高的导通状态电流，但是其导致阈值电压的变化，这可能是由于工艺变化。所提出的器件解决了阈值电压变化的问题，而不影响JLT的固有优势。
In this letter, we report for the first time a distinctive approach of implementing a junctionless transistor (JLT) without doping (doping-less) the ultrathin silicon film. A charge-plasma concept is employed to induce n-region for the formation of source and drain for a n-channel JLT using appropriate metal work function electrodes. Electrical characteristics of the proposed device are simulated and compared with that of a conventionally doped JLT of identical dimensions. In conventional JLTs, the channel doping concentration is generally kept high to ensure high ON-state current, but it causes variation in threshold voltage, which may be due to process variations. The proposed device solves the problem of threshold voltage variability without affecting inherent advantages of JLTs.