X-/ ? -ray photon counting spectroscopy with an AlInP array
X-/ ? -ray photon counting spectroscopy with an AlInP array
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X-/ ？
DOI：
10.1016/j.nima.2021.165293
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Lioliou G
中科院分区：
文献类型：
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作者：
Lioliou G
用金属有机气相外延（MOCVD）生长的ap ~+-in ~+结构晶片（i层厚6 μ m）制作了面积为200 μ m× 200 μ m的AlInP 3× 3像素单片阵列。像素最初进行了电气表征，然后接受能量≤ 88 keV的X射线和γ射线光子的照射，同时每个像素又与定制的低噪声电荷敏感型三极管耦合。通过获得和分析55 Fe X射线、241 Am X射线/γ射线和109 Cd X射线/γ射线谱，研究了像素的光子计数X射线/γ射线谱性能;能量分辨率在5.9 keV下，当阵列和MEMS在最大研究温度（100° C）下操作时，半峰全宽（Full Width at Half Maximum）为1.54 keV±0.08 keV，在22.16 keV下为1.58 keV±0.08 keV，在59.54 keV下为1.57 keV±0.08 keV。这项工作为未来开发用于高温环境下非制冷操作的AlInP光子计数X/γ射线光谱成像仪设定了议程。
An AlInP 3× 3 pixel monolithic array was fabricated from ap+-in+ structure wafer (6 μ m thick i layer) grown by metalorganic vapour phase epitaxy; each pixel (square mesa photodiode) had an area of 200 μ m× 200 μ m. The pixels were initially electrically characterized and were then subjected to illumination by X-ray and γ-ray photons of energies≤ 88 keV while each of them was in turn coupled to a custom-made, low noise, charge-sensitive preamplifier. The photon counting X-/γ-ray spectroscopic performance of the pixels was investigated by obtaining and analysing 55 Fe X-ray, 241 Am X-/γ-ray, and 109 Cd X-/γ-ray spectra; the energy resolution (Full Width at Half Maximum), when the array and preamplifier were operated at the maximum investigated temperature (100° C), was 1.54 keV±0.08 keV at 5.9 keV, 1.58 keV±0.08 keV at 22.16 keV, and 1.57 keV±0.08 keV at 59.54 keV. This work sets the agenda for future development of an AlInP photon counting X-/γ-ray spectroscopic imager for uncooled operation in high temperature environments.