Synthesis of New Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters
Synthesis of New Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters
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由过渡金属封装硅簇组装的新型非晶半导体的合成
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
T. Kanayama
中科院分区：
文献类型：
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作者：
N. Uchida;H. Kintou;Y. Matsushita;T. Tada;T. Kanayama
我们合成了由过渡金属包封的Si团簇（MSin：M=Mo或Nb）组成的非晶薄膜，方法是将氢化的MSinHx团簇沉积到二氧化硅衬底上，然后在500 °C退火脱氢。MoSin（n=7-16）团簇薄膜是半导体，光学带隙> 0.6eV，电阻率>1 Ω cm。特别地，MoSi 12团簇膜具有1.1eV的大带隙和120 Ω cm的电阻率以及32 cm 2/（Vs）的高空穴迁移率。在这些薄膜中，Si原子形成类似于氢化非晶硅中的非晶网络，但通过使用MSin簇作为构建块来减少电子无序。
We synthesized amorphous films composed of transition-metal-encapsulating Si clusters (MSin: M=Mo or Nb) by deposition of hydrogenated MSinHx clusters onto silica substrates followed by annealing at 500 °C for dehydrogenation. The MoSin (n=7–16) cluster films are semiconductors with an optical gap >0.6 eV and resistivity >1 Ω cm. In particular, the MoSi12 cluster film has a large gap of 1.1 eV and resistivity of 120 Ω cm with high hole mobility of 32 cm2/(V s). In these films, Si atoms form amorphous networks similar to those in hydrogenated amorphous Si but the electronic disorder is reduced by the use of MSin clusters as the building blocks.